China’s CXMT Targets 2026 Launch for New DDR5 Server Memory
China’s ChangXin Memory Technologies (CXMT) reported key progress on a next-generation memory-cell design that could increase chip storage density. Company president Cao Kanyu said over the weekend that CXMT plans to introduce new DDR5 registered memory modules for servers by the end of 2026.
The development centers on a 4F² memory-cell structure designed to fit more cells onto a single chip. Mainstream commercial dynamic random-access memory (DRAM) currently uses a 6F² structure. CXMT’s approach employs a proprietary vertical surrounding-gate transistor intended to reduce current leakage while shrinking the area occupied by each cell. Samsung Electronics and SK Hynix are also pursuing the technology, setting up another competitive front in the global memory-chip industry.
On Monday, Samsung shares fell 3.6% to 252,500 won, while SK Hynix dropped 3.4% to 1.624 million won. CXMT shares also declined 3.1% to 49.42 yuan. However, CXMT has not disclosed detailed technical specifications or a firm launch date. Its competitive impact will depend on successful commercialization and meeting server customers’ requirements for reliability and compatibility.
Why it matters
Successful commercialization could strengthen China's domestic memory-chip industry and intensify competition for established suppliers. Investors will watch whether CXMT can turn its design progress into commercially viable server memory.
